The new program can be run from a command line or within a recently developed, powerful graphical user interface. By using the correct carrier statistics and the appropriate set of models it is now possible to avoid the commonly used effective models and adapted values, thus taking a large step in bringing PC1D further towards a more general, consistent and physically meaningful simulation tool for Si solar cells. We find a good correspondence between the simulation results obtained with the different programs, with a deviation of less than 2 fA/cm 2 for the calculated emitter saturation current density using F–D statistics and less than 0.8 % relative deviation in all the main solar cell parameters under 1 sun illumination. The results obtained using cmd-PC1D 6.0 are verified against well-accepted and modern simulations tools for a range of both phosphorus- and boron-doped emitters with varying surface concentration. 3, 4, 7, 8 However, this requires the gain in PCE to prevail over the additional fabrication costs. Several up-to-date models for crystalline Si have been implemented in the new program, including injection dependent band gap narrowing, carrier mobility and Auger recombination. As they do not induce additional area related Balance-of-System costs, high-efficiency tandem solar cells can be a significant measure to reduce the LCOE in the future. In this work we present a modified version of the commonly used semiconductor simulation program PC1D, named cmd-PC1D 6.0, which applies Fermi–Dirac (F–D) statistics, thus improving on the existing Boltzmann approximation that is employed in the original program.
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